LOCALIZED CORROSION OF MICROCRYSTALS OF 1Crl8Ni9Ti STAINLESS STEEL

The resistances against localized corrosion of 1Cr18Ni9Ti microcrystals with normal grainsize and bcc structure obtained hy magnetron sputtering have been compared.The two kindsof microcrystals with (110) and (211) textures respectively were obtained under differentsputtering conditions.Both microcrystals were found to have better resistance against local-ized corrosion than the crystal with normal grain.The microcrystal with (110) preferredorientation has larger resistance to localized corrosion than that with (211) preferredorientation.     

工艺参数对射频磁控溅射PTFE靶形成的等离子体组成的影响

采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射PTFE靶等离子体气氛的影响规律。结果表明：增加脉冲偏压、脉冲频率、脉宽、射频功率和气压能提高Az离子对PTFE靶的溅射能力，增加空间中氟碳自由基的数量，其中各参数对峰位位于25．0aum处的氟碳自由基强度影响最大：脉冲电压从10kV提高到20kV能将该峰强度提高2倍；脉宽从40s提高到100μs强度提高80倍；频率从50Hz提高到200Hz强度提高4倍；溅射气压由0．1Pa提高到0.3Pa强度提高6倍；射频功率由200W提高到400W强度提高6倍。励磁电流能有效的约束氟碳自由基的空间分布。     

离子束溅射法制备Ti—Ni贮氢薄膜的研究

介绍了用离子束溅射制备贮氢薄膜的方法。采用钛板与镍板拼合靶制备的Ti—Ni薄膜为非晶态,具有良好的附着力和抗粉化能力,而晶化后的贮氢性能更好。     

三元合金靶择优溅射稳定态的表面化学成分

基于多元素靶溅射的Andersen-Sigmund关系式，在分析了大量的二、三元素合金溅射稳定态靶表面化学成分的变化之后，发现各元素之间表面结合能之比几乎与靶体化学成分无关。只要给各元素之间设定适当的表面结合能比，就可以很容易地计算出三元合金靶稳定态表面化学成分，至少对于用2keV氩离子轰击的Ag-Pd-Au三元合金靶系来说，其计算结果都与实验值一致。所分析的实验数据是在常温下取得的，所以可不考虑离子轰击诱发的Gibbs偏析，其结论很可能是多元合金靶溅射的一般规律。此外，由Gaidikas等最近所提出的所谓择优溅射中的“基体效应”理论是无实验依据的。     

靶面化合物覆盖度的计算方法研究

由溅射速率方程和反应粒子输运方程得出了靶面化合物的覆盖度。所有方程都用反应室结构参数和宏观参数表示，文中还给出了溅射沉积TiN薄膜的计算结果，结果表明与实验数相吻合，所建立的方法便于工艺优化的实施，属新的工程方法。     

镀铬技术进展

镀铬层具有多方面的优异性能,在工业上已得到了广泛的应用。镀铬技术大体上可以分为电镀铬和真空镀铬。本文侧重于介绍真空镀铬技术。对于工业上通用的电镀铬技术及其近年来的进展也作了概括介绍。并对电镀铬和真空镀铬技术的特点作出了对比说明,还讨论了两种技术的未来发展趋势。     

THE PREPARATION AND CHARACTERISTICS STUDY OF TiNxOy SPECTRAL SELECTIVE ABSORBING FILM BY MAGNETRON SPUTTERING

Spectral selective absorbent film is a crucial factor for the solar heating device. There are many kinds of spectral selective absorbing film made by different ways. TiNxOy thin film with excellent spectral selecting absobent property were successfully prepared by DC magnetron sputtering with Ar as working gas, N2 and O2 as reactive gas, 99.9% titanium as the target and is copper slice as the substrate. In this article, the optical characteristics and microstructure of TiNxOy thin film were studied. Inputing O2 can decrease the reflection of the visible lights, and double layer film can get good absorption for solar energy.     

Theoretical prediction and experimental realization of transition metal doped rutiles as diluted magnetic semiconductors

1. Introduction The new research area of ‘spintronics’ seeks to extend the properties and applications of electronic devices by making use of the spin of electrons in ad- dition to their charge. The development of magnetic semiconductors would be compatible with standard semiconductor technology and open new opportuni- ties. The so-called diluted magnetic semiconductor (DMS) is used to denote the no magnetic semicon- ductor doped with magnetic ions, and there have been considerable progress…     

磁控溅射法制备ZrW2O8/Cu梯度薄膜

在单晶硅基片上用磁控溅射法制备ZrW2O8/Cu梯度薄膜.用X射线衍射分析薄膜的物相组成,用原子力显微镜和扫描电镜对薄膜的表面形貌进行观察和分析,利用X射线光电子能谱技术对薄膜中各元素沿深度的分布情况进行检测.结果表明:溅射所得薄膜为非晶态钨酸锆与氧化铜的复合薄膜,快速热处理和氢气还原后得到立方相钨酸锆与铜的复合薄膜,在760 ℃下热处理钨酸锆的结晶度最好,而在740 ℃热处理的薄膜质量最佳,薄膜中各成分沿厚度方向呈梯度分布.     

Langmuir probe RF plasma compensation using a simulation method

The problem of Langmuir probe data deformation due to RF pickup by the probe is treated through a computer simulation method. It is pointed out that proper RF compensations can be obtained by treatment of the Langmuir probe raw data through the use of computer software. It is demonstrated that correct, RF unaffected probe I–V$I\text{–}V$ characteristics can be accurately reproduced from the RF contaminated data. This eliminates the need for the use of any filters or other hardware procedures. User friendly matlab based software is presented. The software automatically retrieves the correct RF I–V$I\text{–}V$ characteristics for single Langmuir probe data which consequently allows for proper evaluation of plasma parameters such as the plasma electron temperature, electron number density and the electron energy distribution function (EEDF)